strongir fet? IRFH8303PBF 1 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH8303PBF pqfn 5 mm x 6 mm tape and reel 4000 irfh8303trpbf v dss 30 v r ds(on) max 1.10 ? m ??? qg (typical) 58 nc i d (@t c (bottom) = 25c) 100 ? a r g (typical) 1.0 ? ? notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 43 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 280 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 177 ?? i dm pulsed drain current 400 p d @t a = 25c power dissipation 3.7 w p d @t c(bottom) = 25c power dissipation 156 linear derating factor 0.029 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 100 ? applications ?? control mosfet for synchronous buck converter ? pqfn 5 x 6 mm features benefits low thermal resistance to pcb (<0.8c/w) enable better thermal dissipation low profile ( 0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability 100% rg tested increased reliability low r ds(on) ( 1.10 m ? ) lower conduction losses
2 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF d s g ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 0.8 r ? jc (top) junction-to-case ? ??? 21 c/w r ? ja junction-to-ambient ? ??? 34 r ? ja (<10s) junction-to-ambient ? ??? 21 thermal resistance static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 21 ??? mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 0.90 1.10 m ? v gs = 10v, i d = 50a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 150a ? v gs(th) gate threshold voltage coefficient ??? -5.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward l eakage ??? ??? 100 na v gs = 20 v gate-to-source reverse leakage ??? ??? -100 v gs = -20 v gfs forward transconductance 158 ??? ??? s v ds = 15 v, i d = 50a q g total gate charge ??? 119 179 v gs = 10v, v ds = 15v, i d = 50a q g total gate charge ??? 58 87 q gs1 pre-vth gate-to-source charge ??? 14 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 8 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 19 ??? ? i d = 50a q godr gate charge overdrive ??? 17 ??? ? q sw switch charge (q gs2 + q gd ) ??? 27 ??? ? q oss output charge ??? 33 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.0 ??? ? ? t d(on) turn-on delay time ??? 21 ??? v dd = 30v, v gs = 4.5v t r rise time ??? 91 ??? ns i d = 50a t d(off) turn-off delay time ??? 48 ??? ? r g = 1.8 ? t f fall time ??? 65 ??? ? c iss input capacitance ??? 7736 ??? v gs = 0v c oss output capacitance ??? 1363 ??? pf v ds = 24v c rss reverse transfer capacitance ??? 743 ??? ? ? = 1.0mhz ??? 1.30 1.70 v gs = 4.5v, i d = 50a ? diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s =50a, v gs =0v ? t rr reverse recovery time ??? 33 50 ns t j = 25c, i f = 50a, v dd = 15v q rr reverse recovery charge ??? 51 77 nc di/dt = 200a/s ? avalanche characteristics ???? parameter typ. max. units e as single pulse avalanche energy ? ??? 355 mj
3 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v ? 60s pulse width tj = 25c 2.5v fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 50a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 15v 10v 7.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v
4 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package fig 8. maximum safe operating area 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 10. drain-to-source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 1.0 1.4 1.8 2.2 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a
5 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c fig 12. on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: puls e current vs. pulse width 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 14a 25a bottom 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart = 25c (single pulse)
6 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
7 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
8 www.irf.com ? 2013 international rectifier submit datasheet feedback october 24, 2013 ? IRFH8303PBF qualification information ? ? qualification level ? moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes industrial (per jedec jesd47f ?? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? starting t j = 25c, l = 0.28mh, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 100a by source bonding technology. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" tape and reel revision history date comments 10/22/2013 ?? added the rdson at vgs = 4.5v values, on page 2.
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